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SBYV28-50 thru SBYV28-200
Vishay Semiconductors
formerly General Semiconductor
Soft Recovery Ultrafast Plastic Rectifier
DO-201AD
Reverse Voltage 50 to 200V Forward Current 3.5A
Features
1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia.
0.375 (9.5) 0.285 (7.2)
* Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia.
Dimensions in inches and (millimeters)
Case: JEDEC DO-201AD molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.045 oz., 1.2 g
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Minimum reverse breakdown voltage at 100A Maximum average forward rectified current 0.375" (9.5mm) lead lengths at TL = 85C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load at TJ = 150C Typical thermal resistance
(1)
Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units VRRM VRMS VDC V(BR) IF(AV) 50 35 50 55 100 70 100 110 3.5 150 105 150 165 200 140 200 220 V V V V A
IFSM RJA TJ, TSTG
90 25 -55 to +150
A C/W C
Operating and storage temperature range
Electrical Characteristics
Parameter Maximum instantaneous forward voltage at 3.5A (2) Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz
Ratings at 25C ambient temperature unless otherwise specified.
Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units TJ=25C TJ=150C TA=25C TA=100C TJ=25C VF IR trr CJ 1.1 0.89 5.0 300 20 20 V A ns pF
Notes: (1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface (2) Pulse test: tp = 300s, duty cycle 2%
Document Number 88737 11-Feb-02
www.vishay.com 1
SBYV28-50 thru SBYV28-200
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curves
Average Forward Rectified Current (A)
6.0 90
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
80 70 60 50 40 30 20 10ms Single Half Sine-Wave TJ = 175C
5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 TA, Ambient Temperature P.C.B. Mounted 0.5 x 0.5" (12 x 12mm) Copper Pads
Resistive or Inductive Load 0.375" (9.5mm) Lead Length TL Lead Temperature
100
125
150
175
1
10
100
Temperature (C)
Number of Cycles at 50 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
100 1,000
Fig. 4 - Typical Reverse Leakage Characteristics
Instantaneous Reverse Leakage Current (A)
Instantaneous Forward Current (A)
TJ = 100C 10 TJ = 25C Pulse Width = 300s 1% Duty Cycle
100
TJ = 100C
10
1
1
TJ = 25C
0.1
0.1
0.01 0.4
0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Reverse Switching Characteristics
60 100 IF = 4.0A VR=30V di/dt=150A/s
Fig. 6 - Typical Junction Capacitance
TJ = 25C f = 1.0MHZ Vsig = 50mVp-p
Recovered Store Change / Reverse Recovery Time, nC/ns
di/dt=100A/s 40 30 20 10 trr Qrr 0 0 25 50 75 100 125 150 175 di/dt=20A/s di/dt=50A/s di/dt=100A/s di/dt=150A/s di/dt=50A/s di/dt=20A/s
Junction Capacitance, pF
50
10
1 0.1
1
10
100
Junction Temperature (C)
Reverse Voltage (V)
www.vishay.com 2
Document Number 88737 11-Feb-02

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